SST39VF6402-70-4I-EKE Silicon Storage Technology, Inc, SST39VF6402-70-4I-EKE Datasheet

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SST39VF6402-70-4I-EKE

Manufacturer Part Number
SST39VF6402-70-4I-EKE
Description
Manufacturer
Silicon Storage Technology, Inc

Specifications of SST39VF6402-70-4I-EKE

Case
TSOP48
Date_code
2006+

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Part Number:
SST39VF6402-70-4I-EKE
Manufacturer:
SST
Quantity:
2
FEATURES:
• Organized as 4M x16: SST39VF6401/6402
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption (typical values at 5 MHz)
• Hardware Block-Protection/WP# Input Pin
• Sector-Erase Capability
• Block-Erase Capability
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
PRODUCT DESCRIPTION
The SST39VF6401 and SST39VF6402 devices are 4M
x16 respectively, CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with SST’s proprietary, high perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches. The SST39VF640x write (Program or
Erase) with a 2.7-3.6V power supply. These devices con-
form to JEDEC standard pinouts for x16 memories.
Featuring
SST39VF640x devices provide a typical Word-Program
time of 7 µsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
©2008 Silicon Storage Technology, Inc.
S71223(03)-00-EOL
1
– 2.7-3.6V
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
– Top Block-Protection (top 32 KWord)
– Bottom Block-Protection (bottom 32 KWord)
– Uniform 2 KWord sectors
– Uniform 32 KWord blocks
– SST: 128 bits; User: 128 bits
for SST39VF6402
for SST39VF6401
high
64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
performance
6/08
SST39VF6401 / SST39VF6402
Word-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Read Access Time:
• Latched Address and Data
• Fast Erase and Word-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
The SST39VF640x devices are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
– 70 ns
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
– Internal V
– Toggle Bits
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
EOL Data Sheet

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