IRLBA3803PPBF International Rectifier Corp., IRLBA3803PPBF Datasheet

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IRLBA3803PPBF

Manufacturer Part Number
IRLBA3803PPBF
Description
30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
Manufacturer
International Rectifier Corp.
Datasheet

Specifications of IRLBA3803PPBF

Lead_time
63
Pack_quantity
50
Analog
IRFIRLBA3803P
Comm_code
85412900
Eccn
EAR99
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical
outline and pinout as the industry standard TO-220 but can house a considerably
larger silicon die. It has increased current handling capability over both the TO-220
and the much larger TO-247 package. This makes it ideal to reduce component
count in multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has also been designed to meet automotive qualification standard
Q101.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
AR
DM
GS
AS
STG
D
AR
J
@ T
@ T
JC
CS
JA
Logic-Level Gate Drive
Advanced Process Technology
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Purchase IRLBA3803/P for solder plated option.
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyRU
Avalanche CurrentQU
Repetitive Avalanche EnergyQ
Peak Diode Recovery dv/dt SU
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
300 (1.6mm from case )
Typ.
–––
–––
0.5
HEXFET
-55 to + 175
D
S
IRLBA3803
179 V
126V
Max.
720
270
610
1.8
±16
5.0
71
27
20
®
R
Power MOSFET
DS(on)
Max.
V
0.55
I
–––
58
D
Super - 220
DSS
= 179A
PD - 91841C
= 0.005
= 30V
Units
Units
V
W/°C
°C/W
V/ns
mJ
mJ
°C
W
N
A
V
A
1
05/20/02

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