IRFR825TRPBF International Rectifier Corp., IRFR825TRPBF Datasheet
IRFR825TRPBF
Manufacturer Part Number
IRFR825TRPBF
Description
DPAK/MOSFET, 500V, 3.5A, 2.2 OHM, MOTIRFET
Manufacturer
International Rectifier Corp.
Datasheet
1.IRFR825TRPBF.pdf
(9 pages)
Specifications of IRFR825TRPBF
Lead_time
105
Pack_quantity
4000
Comm_code
85412900
Eccn
EAR99
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR825TRPBF
Manufacturer:
SEMIKRON
Quantity:
6 542
Applications
•
•
•
Notes through
Features and Benefits
•
•
•
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Diode Characteristics
I
I
V
t
Q
I
t
D
D
DM
S
SM
rr
RRM
on
www.irf.com
J
STG
D
GS
SD
rr
@ T
@ T
@T
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Parameter
are on page 2
Ã
Parameter
e
GS
GS
@ 10V
@ 10V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
152
167
292
3.6
92
300 (1.6mm from case )
V
500V
138
228
251
438
6.0
1.2
5.4
24
DSS
-55 to + 150
IRFR825TRPbF
Max.
119
± 20
6.0
3.9
1.0
9.9
nC T
24
ns
A
V
A
R
HEXFET Power MOSFET
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
di/dt = 100A/μs
DS(on)
J
J
J
J
J
J
1.05Ω
= 125°C, di/dt = 100A/μs
= 125°C, di/dt = 100A/μs
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
Conditions
typ.
S
F
S
S
= 6.0A
= 6.0A, V
= 6.0A, V
= 6.0A, V
f
IRFR825TRPbF
Trr
92ns
D-Pak
G
GS
GS
GS
typ.
PD - 96433
= 0V
= 0V
= 0V
Units
W/°C
V/ns
f
f
°C
W
A
V
04/11/12
6.0A
D
S
f
f
I
D
1