V10P10-M3-86A VISHAY [Vishay Siliconix], V10P10-M3-86A Datasheet - Page 3

• Manufacturer Part Number: V10P10-M3-86A
• Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
• Manufacturer: VISHAY [Vishay Siliconix]

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89006
Revision: 25-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
= 25 C unless otherwise noted)
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
12
10
10
Fig. 1 - Maximum Forward Current Derating Curve
8
6
4
2
0
8
7
6
5
4
3
2
1
0
1
0
0
0
Fig. 2 - Forward Power Loss Characteristics
T
T
at the Cathode Band Terminal
1
A
L
= 125 °C
measured
25
T
Instantaneous Forward Voltage (V)
2
D = 0.1
0.2
A
= 150 °C
Average Forward Current (A)
3
50
Lead Temperature (°C)
D = 0.2
4
0.4
D = 0.3
5
75
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For technical questions within your region, please contact one of the following:
Resistive or Inductive Load
6
T
100
A
7
= 25 °C
0.6
D = 0.5 D = 0.8
D = t
8
125
p
/T
9
0.8
10 11
150
This document is subject to change without notice.
D = 1.0
T
t
p
175
1.0
12
New Product
10 000
0.001
1000
0.01
100
100
100
0.1
10
10
1
1
0.01
0.1
10
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
20
T
A
30
= 150 °C
T
0.1
A
= 25 °C
t - Pulse Duration (s)
Reverse Voltage (V)
40
1
T
A
= 125 °C
50
1
60
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70
10
10
80
90
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V10P10
100
100
100
3