K6X1008C2D-B Samsung semiconductor, K6X1008C2D-B Datasheet - Page 2

• Manufacturer Part Number: K6X1008C2D-B
• Description: 128Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

VSS
I/O1
I/O2
I/O3
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
K6X1008C2D Family
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
128Kx8 bit Low Power full CMOS Static RAM
FEATURES
K6X1008C2D-B
K6X1008C2D-F
K6X1008C2D-Q
Process Technology: Full CMOS
Organization: 128K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
Product Family
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
32-SOP
32-DIP
CS
I/O
A
Name
0
WE
Vcc
Vss
OE
1
NC
1
~A
, CS
~I/O
16
8
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-SOP-525, 32-TSOP1-0820F
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Automotive(-40~125 C)
Commercial(0~70 C)
Industrial(-40~85 C)
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
Ground
No Connection
VCC
CS2
A13
A15
A14
A11
A16
A12
WE
NC
A9
A8
A7
A6
A5
A4
Temperature
Operating
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Type1-Forward
Function
32-TSOP
Vcc Range
4.5~5.5V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
55
Speed
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
1)
/70ns
2
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6X1008C2D families are fabricated by SAMSUNG s
CS
CS
WE
(I
OE
Standby
SB1
1
2
Power Dissipation
10 A
15 A
25 A
I/O
I/O
, Max)
Row
addresses
1
8
Control
logic
Operating
(I
CC2,
Clk gen.
25mA
Max)
Data
cont
Data
cont
Row
select
32-SOP-525, 32-TSOP1-0820F
32-DIP-600, 32-SOP-525,
CMOS SRAM
32-TSOP1-0820F
Column Addresses
Precharge circuit.
32-SOP-525
Memory array
PKG Type
Column select
I/O Circuit
September 2003
Revision 1.0