RU30100L RUICHIPS [Ruichips Semiconductor Co., Ltd], RU30100L Datasheet - Page 2

• Manufacturer Part Number: RU30100L
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A–MAY., 2012
Static Characteristics
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
R
Symbol
BV
V
DS(ON)
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
Q
t
t
t
oss
rss
rr
iss
DSS
gd
r
f
gs
G
rr
g
④
④
Ruichips Semiconductor Co., Ltd
Pulse width limited by safe operating area.
Limited by T
Pulse test ; Pulse width 300 s, duty cycle 2%.
Guaranteed by design, not subject to production testing.
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Calculated continuous current based on maximum allowable junction temperature. Package limitation
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
current is 60A.
Jmax
Parameter
, I
⑤
AS
=35A, V
⑤
DD
= 48V, R
(T
G
C
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
V
V
=25°C Unless Otherwise Noted)
SD
SD
DS
DS
= 50Ω , Starting T
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
GS
=50A, V
=50A, dl
=50A, V
=5
=50A
=15V,
=15V, R
=24V, V
=0V,V
=0V,
= 30V, V
=V
=0V, I
=±20V, V
=10V, I
= 4.5V, I
2
Test Condition
GS
, I
DS
DS
DS
GS
GEN
SD
DS
GS
=0V,F=1MHz
L
=250 A
DS
GS
=0.3 ,
=250 A
=0V
/dt=100A/ s
=50A
DS
=10V,
=10V,
=35A
=0V
=0V
J
T
= 25°C.
J
=85°C
Min.
30
1
RU30100L
2880
Typ.
580
290
1.4
28
11
25
23
10
24
21
12
2.2
RU30100L
6
www.ruichips.com
4
-
Max.
±100
3.5
6.5
1.2
30
3
1
Unit
m
m
nC
nC
nA
pF
ns
ns
V
V
V
A