SE2582L-EK1 SIGE [SiGe Semiconductor, Inc.], SE2582L-EK1 Datasheet - Page 4

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SE2582L-EK1

Manufacturer Part Number
SE2582L-EK1
Description
Manufacturer
SIGE [SiGe Semiconductor, Inc.]
Datasheet
AC Electrical Characteristics
802.11b/g AC Electrical Characteristics
Conditions: V
212-DST-01 Rev 1.2 Mar-27-2007
Symbol
VSWR
ACPR
STAB
EVM
ΔS
P
t
f
S
r
2f
3f
L-U
1dB
, t
21
21
f
Error Vector Magnitude
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Adjacent Channel Power Ratio
Harmonic
Rise and Fall Time
Stability
Tolerance to output load
mismatching
evaluation board, unless otherwise noted
CC
±11 MHz offsets from carrier
±22 MHz offsets from carrier
= V
EN
Parameter
= 3.3 V, f = 2.45 GHz, T
RangeCharger™ 2.4 GHz Power Amplifier with Power Detector
No modulation
P
P
f
P
Mbps CCK signal, BT =
0.45
P
P
Mbps OFDM signal, 64
QAM
P
Mbps OFDM, 64 QAM,
VSWR = 6:1, all phases
P
Mbps OFDM, 64 QAM,
VSWR = 3:1, all phases
A
IN
IN
IN
OUT
OUT
OUT
OUT
OUT
= 25 °C, as measured on SiGe Semiconductor’s SE2582L-EV1
= 2400 to 2500 MHz
= -25 dBm
= -25 dBm,
Confidential
= 20 dBm, 11
= 20 dBm, CW
= 17.5 dBm, 54
= 17.5 dBm, 54
= 17.5 dBm, 54
Conditions
QA032707
-
-
All non-harmonically related outputs less
2400
Min.
-
-
-
-
-
-
-
-
-
than -50 dBc/100 kHz
Typ.
-37
-52
-48
-50
3.0
0.5
24
30
1
-
No damage
2500
Max.
-
-
-
-
-
-
-
-
-
SE2582L
MHz
dBm
Unit
dBc
dBc
dBc
dB
dB
us
%
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