ATF-13336-STR HP [Agilent(Hewlett-Packard)], ATF-13336-STR Datasheet - Page 2

• Manufacturer Part Number: ATF-13336-STR
• Description: 2-16 GHz Low Noise Gallium Arsenide FET
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-13336 Absolute Maximum Ratings
Part Number Ordering Information
ATF-13336 Typical Performance, T
ATF-13336 Noise Parameters:
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
2.0
1.5
1.0
0.5
DS
Symbol
Thermal Resistance:
Liquid Crystal Measurement:
0
6.0
ATF-13336-STR
T
ATF-13336-TR1
V
V
V
T
= 2.5V, I
Part Number
I
P
STG
Freq.
DS
GD
CH
DS
GS
GHz
T
12.0
14.0
4.0
6.0
8.0
FREQUENCY (GHz)
DS
8.0
= 20 mA, T
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
10.0
NF
G
A
NF
O
Parameter
dB
0.8
1.1
1.2
1.4
1.6
A
12.0 14.0 16.0
O
= 25 C.
Devices Per Reel
16
14
12
10
8
6
[2,3]
1000
10
Mag
.63
.47
.40
.52
.57
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
V
V
2.5
2.0
1.5
1.0
DS
1
DS
jc
0
= 2.5V, f = 12.0 GHz.
= 400 C/W; T
= 2.5 V, I
opt
m Spot Size
A
Units
10
mW
mA
= 25 C
V
V
V
C
C
Ang
-153
138
-45
20
93
-2
5-37
DS
I
DS
NF
Reel Size
= 20 mA
[5]
G
30
(mA)
O
Maximum
CH
A
-65 to +175
Absolute
strip
DS
7"
= 150 C
.
40
I
225
175
+ 5
DSS
-4
-6
R
N
.27
.10
.20
.88
1.3
50
/50
[1]
60
14
12
10
8
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 2.5mW/ C for
4. Storage above +150 C may tarnish
4. The small spot size of this tech-
any of these limits are exceeded.
T
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175 C.
nique results in a higher, though
more accurate determination of
than do alternate methods. See
MEASUREMENTS section for
more information.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CASE TEMPERATURE
CASE
DS
25
20
15
10
5
0
2.0
= 2.5 V, I
> 85 C.
FREQUENCY (GHz)
DS
4.0
|S
= 20 mA.
MSG
21
|
2
6.0 8.0 10.0 12.0 16.0
= 25 C.
MAG
jc