ATF-10100-GP3 HP [Agilent(Hewlett-Packard)], ATF-10100-GP3 Datasheet - Page 2

• Manufacturer Part Number: ATF-10100-GP3
• Description: 0.5-12 GHz Low Noise Gallium Arsenide FET
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-10100 Absolute Maximum Ratings
Part Number Ordering Information
ATF-10100 Typical Performance, T
ATF-10100 Noise Parameters:
Thermal Resistance:
Liquid Crystal Measurement:
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
V
Symbol
1.5
1.0
0.5
DS
0
T
V
V
V
T
I
P
0
= 2V, f = 4.0 GHz.
STG
Freq.
DS
GD
CH
DS
GS
GHz
T
1.0
2.0
4.0
6.0
8.0
Part Number
ATF-10100-GP3
10
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
G
I
A
DS
(mA)
NF
DS
NF
Parameter
0.4
0.4
0.55
0.8
1.0
O
dB
.
20
O
30
16
14
12
10
[2,3]
Mag
0.78
0.55
0.39
0.41
0.46
[4]
V
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
1 m Spot Size
30
20
10
DS
DS
0
jc
1.0
= 225 C/W; T
= 2 V, I
= 2 V, I
opt
Devices Per Tray
Units
A
mW
mA
V
V
V
= 25 C
C
C
Ang
2.0
FREQUENCY (GHz)
DS
105
144
DS
13
27
65
|S
5-20
= 25 mA.
21
50
= 25 mA
|
2
[4]
Maximum
CH
-65 to +175
MSG
Absolute
4.0
= 150 C
I
430
175
+ 5
DSS
-4
-7
6.0 8.0 10.0 12.0
R
0.40
0.29
0.22
0.16
0.10
N
/50
[1]
MAG
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 4.4 mW/ C for
4. The small spot size of this tech-
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
2.0
1.5
1.0
0.5
DS
any of these limits are exceeded.
T
nique results in a higher, though
more accurate determination of
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
0
2.0
CASE TEMPERATURE
CASE
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
= 2V, I
DS
30
20
10
0
1.0
> 78 C.
= 4 V, I
NF
DS
O
FREQUENCY (GHz)
4.0
= 25 mA, T
DS
FREQUENCY (GHz)
2.0
|S
= 70 mA.
21
= 25 C.
|
2
6.0
G
MSG
A
4.0
A
= 25 C.
8.0 10.0 12.0
6.0 8.0 10.0 12.0
MAG
18
15
12
9
6
jc