IRFP32N50K_04 IRF [International Rectifier], IRFP32N50K_04 Datasheet - Page 4

• Manufacturer Part Number: IRFP32N50K_04
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]

100000
4
10000
1000
1000
100
0.1
100
10
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 150 C
V
J
SD
0.6
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
°
10
= C gd
= C gs + C gd , C ds
T = 25 C
0.9
J
Crss
Ciss
Coss
f = 1 MHZ
°
100
1.3
V
GS
SHORTED
= 0 V
1.6
1000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
10
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
32A
Gate-to-Source Voltage
V
DS
40
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
80
BY R
V
V
V
DS(on)
DS
DS
DS
120
10us
100us
1ms
10ms
= 400V
= 250V
= 100V
1000
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160
10000
200