IRFP054_11 VISHAY [Vishay Siliconix], IRFP054_11 Datasheet

IRFP054_11

Manufacturer Part Number

IRFP054_11

Description

Power MOSFET

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.IRFP054_11.pdf (9 pages)

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

e. Current limited by the package, (die current = 90 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91200

S11-0447-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Soldering Recommendations (Peak Temperature)

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

TO-247AC

≤ 90 A, dI/dt ≤ 200 A/μs, V

= 25 V, starting T

(Ω)

= 25 °C, L = 92 μH, R

≤ V

= 10 V

, T

N-Channel MOSFET

Single

≤ 175 °C.

160

This datasheet is subject to change without notice.

= 25 Ω, I

= 25 °C, unless otherwise noted)

Power MOSFET

0.014

6-32 or M3 screw

at 10 V

= 90 A (see fig. 12).

for 10 s

= 25 °C

TO-247AC

IRFP054PbF

SiHFP054-E3

IRFP054

SiHFP054

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because of its isolated mouting hole. It also

provides greater creepage distance between pins to meet

the requirements of most safety specifications.

TO-247AC

SYMBOL

dV/dt

, T

device

stg

design,

IRFP054, SiHFP054

package

- 55 to + 175

LIMIT

± 20

360

373

230

300

1.5

4.5

1.1

low

www.vishay.com/doc?91000

Vishay Siliconix

on-resistance

preferred

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

and

for

Related parts for IRFP054_11

IRFP054_11 Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration TO-247AC G D ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage ...

IRFP054, SiHFP054 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91200 S11-0447-Rev. C, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET ...

Page 4

IRFP054, SiHFP054 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91200 S11-0447-Rev. C, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. ...

Page 6

IRFP054, SiHFP054 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. ...

Page 7

D.U. Driver gate drive D.U.T. l Rever e recovery current D.U.T. V Re-applied voltage Inductor current Note for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured ...

Page 8

TO-247AC (HIGH VOLTAGE E MILLIMETERS DIM. MIN. MAX. A ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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