2SK882_07 TOSHIBA [Toshiba Semiconductor], 2SK882_07 Datasheet
2SK882_07
Manufacturer Part Number
2SK882_07
Description
Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK882_07.pdf
(6 pages)
FM Tuner, VHF RF Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Low reverse transfer capacitance: C
Low noise figure: NF = 1.7dB (typ.)
High power gain: G
Recommend operation voltage: 5~15 V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: I
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
DSS
Characteristics
Characteristics
classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
ps
= 28dB (typ.)
(Ta = 25°C)
(Ta = 25°C)
V
rss
Symbol
Symbol
GS (OFF)
V
⎪Y
I
I
V
V
C
T
C
G
GSS
T
DSS
P
NF
DSX
= 0.025 pF (typ.)
I
GS
DS
stg
rss
D
ch
iss
ps
fs
D
(Note)
⎪
2SK882
V
V
V
V
V
V
V
DS
GS
DS
DS
DS
DS
DS
−55~125
Rating
= 0, V
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, f = 100 MHz (Figure 1)
= −4 V, I
100
125
20
±5
30
1
GS
Test Condition
D
D
= ±5 V
GS
GS
GS
= 100 μA
= 100 μA
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
Unit
mW
mA
°C
°C
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
20
20
⎯
⎯
⎯
⎯
⎯
⎯
3
0.025
Typ.
3.0
1.7
10
28
⎯
⎯
⎯
⎯
2-2E1C
SC-70
2007-11-01
―
−2.5
0.04
Max
±50
4.3
3.0
14
⎯
⎯
⎯
2SK882
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
dB
V
V
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2SK882_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications • Low reverse transfer capacitance: C • Low noise figure 1.7dB (typ.) • High power gain 28dB (typ.) ps • Recommend ...
Page 2
L1: 1.0 mmφ silver plated copper wire 4 mmφ ID TAP at 1.0 T from coil end L2: 1.0 mmφ silver plated copper wire 3 mmφ ID length Marking Figure ...
Page 3
3 2SK882 2007-11-01 ...
Page 4
4 2SK882 2007-11-01 ...
Page 5
5 2SK882 2007-11-01 ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...