2SK880_07 TOSHIBA [Toshiba Semiconductor], 2SK880_07 Datasheet
2SK880_07
Manufacturer Part Number
2SK880_07
Description
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK880_07.pdf
(4 pages)
TOSHIBA SemiconductorTOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Audio Frequency Low Noise Amplifier Applications
•
•
•
•
•
Absolute Maximum Ratings
Marking
Electrical Characteristics
High |Y
High breakdown voltage: V
Low noise: NF = 1.0dB (typ.)
High input impedance: I
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
fs
|: |Y
Characteristics
Characteristics
at V
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
fs
DS
| = 15 mS (typ.) at V
= 10 V, I
GSS
GDS
D
= −1 nA (max) at V
= 0.5 mA, f = 1 kHz, R
(Ta = 25°C)
= −50 V
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
NF (1)
NF (2)
V
DS
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
= 10 V, V
⎪
2SK880
V
V
V
V
V
V
V
V
I
V
I
GS
D
D
GS
DS
DS
DS
DS
DS
DG
DS
DS
= 0.5 mA, f = 10 Hz
= 0.5 mA, f = 1 kHz
GS
−55~125
= −30 V
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, R
= 10 V, R
G
= −30 V, V
= 10 V, I
−50
100
125
10
= 0
= 1 kΩ
1
G
= −100 μA
Test Condition
D
D
GS
GS
GS
G
G
= 0.1 μA
DS
= 0, f = 1 MHz
= 1 kΩ
= 1 kΩ
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
Unit
mW
mA
°C
°C
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.2
Min
−50
1.2
4.0
⎯
⎯
⎯
⎯
⎯
Typ.
15
13
⎯
⎯
⎯
⎯
3
5
1
2-2E1B
SC-70
2007-11-01
―
−1.0
14.0
−1.5
Max
⎯
⎯
⎯
⎯
⎯
⎯
2SK880
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V
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2SK880_07 Summary of contents
Page 1
TOSHIBA SemiconductorTOSHIBA Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications • High | (typ • High breakdown voltage: V GDS • Low noise: NF ...
Page 2
2 2SK880 2007-11-01 ...
Page 3
3 2SK880 2007-11-01 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...