K9F2808U0A Samsung semiconductor, K9F2808U0A Datasheet - Page 2

• Manufacturer Part Number: K9F2808U0A
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

CLE
ALE
N.C
N.C
N.C
N.C
N.C
R/B
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
N.C
N.C
N.C
N.C
NOTE : Connect all V
16M x 8 Bit NAND Flash Memory
FEATURES
WE
WP
K9F2808U0A-YCB0, K9F2808U0A-YIB0
PIN CONFIGURATION
RE
CE
SE
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- Random Access : 10 s(Max.)
- Serial Page Access : 50ns(Min.)
- Program Time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Voltage Supply : 2.7V~3.6V
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Package : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
5
6
7
8
9
Do not leave V
K9F2808U0A-YCB0/YIB0
CC
CC
and V
or V
SS
SS
disconnected.
pins of each device to common power supply outputs.
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
2
GENERAL DESCRIPTION
The K9F2808U0A is a 16M(16,777,216)x8bit NAND Flash
Memory with a spare 512K(524,288)x8bit. Its NAND cell pro-
vides the most cost-effective solution for the solid state mass
storage market. A program operation programs the 528-byte
page in typically 200 s and an erase operation can be per-
formed in typically 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve
as the ports for address and data input/output as well as com-
mand inputs. The on-chip write controller automates all pro-
gram and erase functions including pulse repetition, where
required, and internal verify and margining of data. Even the
write-intensive
K9F2808U0A s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm.
The K9F2808U0A is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
PIN DESCRIPTION
I/O
Pin Name
GND
0
CLE
ALE
V
N.C
WE
WP
R/B
V
CE
RE
~ I/O
CC
SS
7
systems
Data Input/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
GND input for enabling spare area
Ready/Busy output
Power
Ground
No Connection
can
FLASH MEMORY
Pin Function
take
advantage
of
the