AM29SL800CT100FC AMD [Advanced Micro Devices], AM29SL800CT100FC Datasheet

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AM29SL800CT100FC

Manufacturer Part Number
AM29SL800CT100FC
Description
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Am29SL800C
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 1.8 Volt-only Super Low Voltage Flash Memory
DISTINCTIVE CHARACTERISTICS
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Single power supply operation
— 1.8 to 2.2 V for read, program, and erase
— Ideal for battery-powered applications
Manufactured on 0.32 µm process technology
— Compatible with 0.35 µm Am29SL800B device
High performance
— Access times as fast as 100 ns
Ultra low power consumption (typical values at
5 MHz)
— 65 nA Automatic Sleep Mode current
— 65 nA standby mode current
— 5 mA read current
— 10 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
Unlock Bypass Program Command
— Reduces overall programming time when
operations
fifteen 64 Kbyte sectors (byte mode)
fifteen 32 Kword sectors (word mode)
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
issuing multiple program command sequences
PRELIMINARY
Refer to AMD’s Website (www.amd.com) for the latest information.
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 write cycle guarantee per
sector
Package option
— 48-pin TSOP
— 48-ball FBGA
Compatibility with JEDEC standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
power supply Flash
program or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication# 22230
Issue Date: August 1998
Rev: A Amendment/0

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AM29SL800CT100FC Summary of contents

Page 1

PRELIMINARY Am29SL800C 8 Megabit ( 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered ...

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GENERAL DESCRIPTION The Am29SL800C Mbit, 1.8 V volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-pin TSOP and 48- ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Options Max access time ACC Max CE# access time Max OE# access time Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM ...

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CONNECTION DIAGRAMS A15 1 2 A14 A13 3 A12 4 A11 5 A10 WE# 11 RESET RY/BY# 15 A18 16 A17 ...

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CONNECTION DIAGRAMS A17 A3 B3 RY/BY WE# RESET A13 A12 Special Handling Instructions for FBGA Packages Special handling is required for Flash Memory products ...

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PIN CONFIGURATION A0–A18 = 19 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) BYTE# = Selects 8-bit or 16-bit mode CE# = Chip enable OE# = Output enable WE# ...

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ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combi- nation) is formed by a combination of the elements below. Am29SL800C T 100 Valid Combinations Am29SL800CT100, Am29SL800CB100 Am29SL800CT120, EC, EI, ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...

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For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more infor- mation. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters ...

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Table 2. Am29SL800CT Top Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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Table 3. Am29SL800CB Bottom Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding ...

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START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

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START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 2. Temporary Sector Unprotect ...

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The reset command may be written between the se- quence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ig- nores reset commands until the operation ...

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Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Completed Note: See Table 5 for program command sequence. Figure 3. Program Operation Chip Erase Command Sequence Chip erase ...

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When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the sta- tus of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to ...

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Table 5. Am29SL800C Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, de- termining the ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current CC I CC2 (Notes ...

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DC CHARACTERISTICS (Continued) Zero Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...

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TEST CONDITIONS Device Under Test C L Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 2.0 V 1.0 V Input 0.0 V Figure 12. Input Waveforms and Measurement Levels ...

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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (see Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (see Note) t RESET# ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# BYTE# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH Data ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE Data RY/BY VCS Notes program address program data Illustration shows ...

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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE# t GHWL OE WE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Temporary Sector ...

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AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH DS ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes program address program data, DQ7# = complement of the data written, ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Byte Mode Chip Programming Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following conditions 2.0 ...

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PHYSICAL DIMENSIONS* TS 048—48-Pin Standard TSOP (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering TSR048—48-Pin Reverse TSOP (measured in millimeters) Pin 1 ...

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PHYSICAL DIMENSIONS FGB048—48-Ball Fine-Pitch Ball Grid Array (FBGA (measured in millimeters) DATUM B 0.025 CHAMFER INDEX 0.80 0.40 ± 0.08 (48x) 0. 0.25 0.45 DETAIL A 1.20 MAX ...

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Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this ...

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