AM29PDL640AGA85NS SPANSION [SPANSION], AM29PDL640AGA85NS Datasheet - Page 66

• Manufacturer Part Number: AM29PDL640AGA85NS
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 ° C, 3.0 V V
2. Under worst case conditions of 90 ° C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
PACKAGE PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
FLASH DATA RETENTION
64
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Word Program Time
Chip Program Time (Note 3)
Input voltage with respect to V
(including RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 14
Parameter
Current
Symbol
C
C
C
C
OUT
IN2
IN3
IN
for further information on command definitions.
A
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP#/ACC Pin Capacitance
= 25°C, f = 1.0 MHz.
Description
SS
SS
CC
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am49PDL640AG
= 3.0 V, one pin at a time.
0.4
56
28
7
4
Max (Note 2)
210
120
84
5
Test Setup
V
V
V
V
OUT
Test Conditions
IN
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
= 0
Min
= 0
CC
150 ° C
125 ° C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
Typ
overhead (Note 5)
11
12
14
17
November 20, 2003
Comments
V
+100 mA
CC
Min
Max
13 V
10
20
Max
+ 1.0 V
14
16
16
20
Years
Years
Unit
Unit
pF
pF
pF
pF