AM29PDL310G73WHIN SPANSION [SPANSION], AM29PDL310G73WHIN Datasheet - Page 56

• Manufacturer Part Number: AM29PDL310G73WHIN
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
BGA BALL CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
February 26, 2003
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Word Program Time
Chip Program Time (Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 14
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
for further information on command definitions.
A
= 25°C, f = 1.0 MHz.
Description
Control Pin Capacitance
Parameter Description
SS
SS
CC
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am29PDL640G
= 3.0 V, one pin at a time.
0.4
56
28
7
4
Max (Note 2)
210
120
84
5
Test Setup
V
V
V
OUT
Test Conditions
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
4.2
5.4
3.9
Comments
V
+100 mA
CC
Min
13 V
Max
10
20
Max
+ 1.0 V
5.0
6.5
4.7
Years
Years
Unit
Unit
pF
pF
pF
55