SI7856ADP-T1 Vishay Semiconductors, SI7856ADP-T1 Datasheet

no-image

SI7856ADP-T1

Manufacturer Part Number

SI7856ADP-T1

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI7856ADP-T1.pdf (5 pages)

Specifications of SI7856ADP-T1

Case

SO-8

Date_code

0523+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI7856ADP-T1-E3

Manufacturer:

CY

Quantity:

328

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI7856ADP-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

SI7856ADP-T1-GE3

Manufacturer:

VISHAY/PBF

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI7856ADP-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (65Kb)

Notes

a.

Document Number: 71850

S-31727—Rev. B, 18-Aug-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

30

30

(V)

J

8

ti

6.15 mm

D

Ordering Information: Si7856DP-T1

t A bi

7

D

6

D

J

J

0.0055 @ V

a

a

0.0045 @ V

PowerPAK SO-8

= 150_C)

= 150_C)

t

Bottom View

a

a

5

Parameter

Parameter

D

r

DS(on)

a

a

GS

1

GS

S

(W)

N-Channel 30-V (D-S) MOSFET

= 4.5 V

= 10 V

2

S

a

3

S

5.15 mm

4

G

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

T

T

T

T

t v 10 sec

A

A

A

A

I

= 25_C

= 70_C

= 25_C

= 70_C

D

25

23

(A)

Symbol

Symbol

T

R

R

R

V

V

J

I

P

P

, T

DM

thJC

I

I

I

thJA

DS

GS

D

D

S

D

D

stg

FEATURES

D TrenchFETr Power MOSFET

D Optimized for “Low Side” Synchronous

D New Low Thermal Resistance PowerPAKr

D 100% R

APPLICATIONS

D DC/DC Converters

D Synchronous Rectifiers

Rectifier Operation

Package with Low 1.07-mm Profile

G

10 secs

Typical

N-Channel MOSFET

4.5

5.4

3.4

1.0

25

19

18

50

g

Tested

-55 to 150

D

S

"20

30

60

Steady State

Maximum

Vishay Siliconix

1.6

1.9

1.2

1.5

14

23

65

11

Si7856DP

www.vishay.com

Unit

Unit

_C/W

C/W

_C

W

W

V

V

A

A

1

Related parts for SI7856ADP-T1

Related keywords

SI7856ADP-T1 datasheet
SI7856ADP-T1 data sheet
SI7856ADP-T1 pdf datasheet
SI7856ADP-T1 component
SI7856ADP-T1 part
SI7856ADP-T1 distributor
SI7856ADP-T1 RoHS
SI7856ADP-T1 datasheet download