SI6562DQ-T1 Vishay Semiconductors, SI6562DQ-T1 Datasheet
SI6562DQ-T1
Manufacturer Part Number
SI6562DQ-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI6562DQ-T1.pdf
(7 pages)
Specifications of SI6562DQ-T1
Case
TSSOP-8
Date_code
2004+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6562DQ-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6562DQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
32 964
Company:
Part Number:
SI6562DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 838
Part Number:
SI6562DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
N-Channel
N-Channel
P-Channel
P-Channel
Surface Mounted on FR4 Board, t
D
G
S
S
1
1
1
1
1
2
3
4
V
Si6562DQ
DS
TSSOP-8
–20
–20
Top View
20
20
(V)
J
J
a
a
= 150 C)
= 150 C)
a
N- and P-Channel 2.5-V (G-S) MOSFET
Parameter
Parameter
a
a
10 sec.
0.050 @ V
0.085 @ V
0.030 @ V
0.040 @ V
8
7
6
5
r
D
S
S
G
a
DS(on)
2
2
2
2
GS
GS
GS
GS
( )
= –4.5 V
= –2.5 V
= 4.5 V
= 2.5 V
T
T
T
T
I
D
A
A
A
A
G
= 25 C
= 70 C
= 25 C
= 70 C
(A)
4.5
3.9
3.5
2.7
1
N-Channel MOSFET
D
Symbol
Symbol
S
1
1
T
R
J
V
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
N-Channel
1.25
20
4.5
3.6
12
30
N- or P-Channel
www.vishay.com FaxBack 408-970-5600
G
2
–55 to 150
P-Channel MOSFET
0.64
1.0
125
Vishay Siliconix
P-Channel
D
S
2
2
–1.25
–20
Si6562DQ
3.5
2.7
12
30
Unit
Unit
W
W
C/W
V
V
A
A
A
C
2-1
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