SI3948DV-T1 Vishay Semiconductors, SI3948DV-T1 Datasheet

no-image

SI3948DV-T1

Manufacturer Part Number
SI3948DV-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI3948DV-T1

Case
SOT163
Date_code
2005

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3948DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3948DV-T1-E3
Quantity:
70 000
Part Number:
SI3948DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70969
S-61828—Rev. A, 23-Aug-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 s Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
3 mm
Surface Mounted on FR4 Board.
t
DS
30
30
5 sec.
(V)
G1
G2
S2
Top View
1
2
3
TSOP-6
2.85 mm
J
J
a, b
a, b
0.175 @ V
0.105 @ V
= 150 C)
= 150 C)
a
a
r
Parameter
Parameter
DS(on)
6
5
4
Dual N-Channel 30-V (D-S) MOSFET
a, b
a, b
GS
GS
( )
= 4.5 V
= 10 V
D1
S1
D2
a, b
Steady State
Steady State
T
T
T
T
t
A
A
A
A
I
New Product
D
= 25 C
= 70 C
= 25 C
= 70 C
5 sec
(A)
2.5
2.0
G
1
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
I
I
DM
thJA
thJA
I
thJL
GS
DS
D
D
S
D
D
stg
D
S
1
1
Typical
130
93
75
G
–55 to 150
2
Limit
www.vishay.com FaxBack 408-970-5600
1.05
1.15
0.73
N-Channel MOSFET
30
2.5
2.0
20
8
Maximum
Vishay Siliconix
D
S
110
150
90
2
2
Si3948DV
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

Related parts for SI3948DV-T1

Related keywords