MC74HCT373AN ON Semiconductor, MC74HCT373AN Datasheet - Page 3

MC74HCT373AN

Manufacturer Part Number

MC74HCT373AN

Description

IC LATCH TRNSP OCTAL 3ST 20DIP

Manufacturer

ON Semiconductor

Series

74HCTr

Datasheet

1.MC74HCT373ADTR2G.pdf (8 pages)

Specifications of MC74HCT373AN

Logic Type

D-Type Transparent Latch

Circuit

8:8

Output Type

Tri-State

Voltage - Supply

4.5 V ~ 5.5 V

Independent Circuits

Delay Time - Propagation

28ns

Current - Output High, Low

6mA, 6mA

Operating Temperature

-55°C ~ 125°C

Mounting Type

Through Hole

Package / Case

20-DIP (0.300", 7.62mm)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MC74HCT373ANOS

Current page: 3 of 8
Download datasheet (164Kb)

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î

*Maximum Ratings are those values beyond which damage to the device may occur.

†Derating — Plastic DIP: – 10 mW/°C from 65° to 125°C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

MAXIMUM RATINGS*

Symbol

RECOMMENDED OPERATING CONDITIONS

DC ELECTRICAL CHARACTERISTICS

Functional operation should be restricted to the Recommended Operating Conditions.

Symbol

out

stg

, V

, t

out

Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î

DC Supply Voltage (Referenced to GND)

DC Input Voltage (Referenced to GND)

DC Output Voltage (Referenced to GND)

DC Input Current, per Pin

DC Output Current, per Pin

DC Supply Current, V

Power Dissipation in Still Air,

Storage Temperature

Lead Temperature, 1 mm from Case for 10 Seconds

DC Supply Voltage (Referenced to GND)

DC Input Voltage, Output Voltage (Referenced to GND)

Operating Temperature, All Package Types

Input Rise and Fall Time (Figure 1)

Minimum High−Level Input

Voltage

Maximum Low−Level Input

Voltage

Minimum High−Level Output

Voltage

Maximum Low−Level Output

Voltage

Maximum Input Leakage Cur-

rent

Maximum Three−State

Leakage Current

Maximum Quiescent Supply

Current (per Package)

SOIC Package: – 7 mW/°C from 65° to 125°C

TSSOP Package: − 6.1 mW/°C from 65° to 125°C

(Plastic DIP, SOIC, SSOP or TSSOP Package)

Parameter

and GND Pins

Î Î Î Î Î Î Î Î Î

TSSOP Package†

(Voltages Referenced to GND)

Output in High−Impedance State

out

SOIC Package†

out

= V

| v 20 mA

| v 6.0 mA

| v 20 mA

| v 6.0 mA

= 0 mA

= 0.1 V or V

= V

Plastic DIP†

Test Conditions

or V

or GND

http://onsemi.com

or GND

Î Î Î Î Î

– 0.5 to V

– 0.1 V

– 0.5 to + 7.0

– 65 to + 150

Î Î

– 55

Min

4.5

Value

± 20

± 35

± 75

750

500

450

260

Î Î

Î Î Î Î

+ 125

+ 0.5

Max

500

5.5

Î Î Î

4.5

5.5

4.5

5.5

4.5

5.5

4.5

5.5

4.5

5.5

Unit

°C

Î Î Î Î Î Î Î Î Î

Î Î Î Î

– 55 to

25°C

± 0.1

± 0.5

3.98

0.26

2.0

0.8

4.4

5.4

0.1

4.0

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

cuit. For proper operation, V

range GND v (V

tied to an appropriate logic voltage

level (e.g., either GND or V

Unused outputs must be left open.

Guaranteed Limit

out

This device contains protection

Unused inputs must always be

Î Î Î

should be constrained to the

v 85°C

± 1.0

± 5.0

3.84

0.33

2.0

0.8

4.4

5.4

0.1

Î Î Î Î

v 125°C

or V

± 1.0

± 10

160

2.0

0.8

4.4

5.4

3.7

0.1

0.4

out

Î Î Î

) v V

Unit

and

MC74HCT373AN ON Semiconductor, MC74HCT373AN Datasheet - Page 3

MC74HCT373AN

Specifications of MC74HCT373AN

Related parts for MC74HCT373AN