TC58FVM6T2AFT65 TOSHIBA Semiconductor CORPORATION, TC58FVM6T2AFT65 Datasheet

TC58FVM6T2AFT65

Manufacturer Part Number

TC58FVM6T2AFT65

Description

TSOP-48

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.TC58FVM6T2A.pdf (61 pages)

2.TC58FVM6T2AFT65.pdf (61 pages)

Specifications of TC58FVM6T2AFT65

Date_code

04+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

TC58FVM6T2AFT65

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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64MBIT (8M u 8 BITS/4M u 16 BITS) CMOS FLASH MEMORY

DESCRIPTION

memory organized as 8388608 words u 8 bits or as 4194304 words u 16 bits. The TC58FVM6T2A/B2A features

commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands

are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The

TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or

Erase operation.

FEATURES

x Power supply voltage

x Operating temperature

x Organization

x Functions

The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash

8M u 8 bits/4M u 16 bits

Simultaneous Read/Write

Page Read

Auto Program, Auto Page Program

Auto Block Erase, Auto Chip Erase

Fast Program Mode/Acceleration Mode

Program Suspend/Resume

Erase Suspend/Resume

data polling/Toggle bit

block protection, boot block protection

Automatic Sleep, support for hidden ROM area

common flash memory interface (CFI)

Byte/Word Modes

40qC~85qC

2.3 V~3.6 V

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

x Block erase architecture

x Boot block architecture

x Mode control

x Erase/Program cycles

x Access Time (Random/Page)

x Power consumption

x Package

8 u 8 Kbytes/127 u 64 Kbytes

TC58FVM6T2A: top boot block

TC58FVM6B2A: bottom boot block

Compatible with JEDEC standard commands

10 PA

15 mA (Program/Erase operation)

55 mA (Random Read operation)

11 mA (Address Increment Read operation)

5 mA

TC58FVM6**AFT:

TC58FVM6**AXB:

2.7~3.6 V

2.3~3.6 V

TSOPI48-P-1220-0.50 (weight: 0.51 g)

P-TFBGA56-0710-0.80AZ (weight: 0.125 g)

cycles typ.

(Standby)

(Page Read operation)

TC58FVM6(T/B)2A(FT/XB)65

65 ns/25 ns

70 ns/30 ns

CL = 30 pF

CL = 100 pF

2003-01-29 1/61

70 ns/30 ns

75 ns/35 ns

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