MC74VHC1GT04DFT1 ON Semiconductor, MC74VHC1GT04DFT1 Datasheet - Page 2
![IC GATE INVERTER SNGL 1IN SOT353](/photos/5/32/53258/7sz_sot___353_419a___02_sml.jpg)
MC74VHC1GT04DFT1
Manufacturer Part Number
MC74VHC1GT04DFT1
Description
IC GATE INVERTER SNGL 1IN SOT353
Manufacturer
ON Semiconductor
Series
74VHCr
Datasheet
1.M74VHC1GT04DFT1G.pdf
(6 pages)
Specifications of MC74VHC1GT04DFT1
Logic Type
Inverter
Number Of Inputs
1
Number Of Circuits
1
Current - Output High, Low
8mA, 8mA
Voltage - Supply
3 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MC74VHC1GT04DOSCT
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
MAXIMUM RATINGS
Symbol
RECOMMENDED OPERATING CONDITIONS
Symbol
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
I
Latchup
Temperature °C
V
V
V
I
t
V
V
T
V
I
OUT
I
q
V
P
r
OUT
I
T
T
ESD
OUT
T
OK
CC
stg
CC
IK
JA
CC
, t
IN
IN
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Time, Years
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
MC74VHC1GT04
http://onsemi.com
CC
and Below GND at 125°C (Note 4)
Charged Device Model (Note 3)
Human Body Model (Note 1)
2
V
OUT
Machine Model (Note 2)
Figure 3. Failure Rate vs. Time Junction Temperature
< GND; V
V
V
SC−88A, TSOP−5
CC
CC
High or Low State
High or Low State
SC−88A, TSOP−5
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
V
V
CC
CC
> V
= 0
= 0
CC
10
TIME, YEARS
Min
−55
3.0
0.0
0.0
0.0
−0.5 to V
0
0
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 400
+150
±500
+20
+25
+50
N/A
−20
200
333
260
CC
+ 0.5
100
+125
Max
V
100
5.5
5.5
5.5
20
CC
1000
_C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V