K9F2G08U0MPCB0 Samsung, K9F2G08U0MPCB0 Datasheet

K9F2G08U0MPCB0

Manufacturer Part Number

K9F2G08U0MPCB0

Description

TSOP-48

Manufacturer

Samsung

Datasheet

1.K9F2G08U0MPCB0.pdf (35 pages)

Specifications of K9F2G08U0MPCB0

Date_code

05+

Current page: 1 of 35
Download datasheet (569Kb)

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

256M x 8 Bit / 128M x 16 Bit

Revision No

0.0

0.1

0.2

0.3

0.4

History

1. Initial issue

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

The min. Vcc value 1.8V devices is changed.

K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Few current value is changed.

Before

After

1. The 3rd Byte ID after 90h ID read command is don’ t cared.

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9F2G08Q0M-PCB0,PIB0

K9F2G08U0M-PCB0,PIB0

K9F2G16U0M-PCB0,PIB0

K9F2G16Q0M-PCB0,PIB0

The 5th Byte ID after 90h ID read command is deleted.

K9F2G08Q0M

Typ.

Max.

100

Typ.

K9F2G08U0M

NAND Flash Memory

Max.

Unit : us

Max.

100

FLASH MEMORY

Draft Date

Sep. 19.2001

Nov. 22. 2002

Mar. 6.2003

Apr. 2. 2003

Apr. 9. 2003

Preliminary

Remark

Advance

Preliminary

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