1MBI150NH060 Fuji Electric holdings CO.,Ltd, 1MBI150NH060 Datasheet
1MBI150NH060
Manufacturer Part Number
1MBI150NH060
Description
MODULE
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.1MBI150NH060.pdf
(4 pages)
Specifications of 1MBI150NH060
Date_code
06+
IGBT MODULE ( N series )
n n Features
• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function (~3 Times Rated Current)
n n Maximum Ratings and Characteristics
•
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Currrent
•
Thermal Resistance
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Items
Items
Items
Continuous
1ms
Continuous
1ms
A.C. 1min.
( at T
( T
j
=25°C )
c
=25°C
Note: *1:Recommendable Value; 2.5
Terminals *1
Mounting *1
-I
-I
)
Symbols
V
V
I
I
P
T
T
V
I
I
V
V
C
C
C
t
t
t
t
V
t
I
Symbols
Symbols
C
C PULSE
C
C PULSE
CES
GES
ON
r
OFF
f
rr
RRM
j
stg
CES
GES
C
is
GE(th)
CE(sat)
F
ies
oes
res
R
R
R
th(c-f)
th(j-c)
th(j-c)
http://store.iiic.cc/
-40
Ratings
+150
2500
IGBT
Diode
With Thermal Compound
600
150
300
150
300
600
3.5
3.5
20
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
V
C
F
F
+125
GE
CE
GE
GE
GE
CE
CC
GE
R
G
=150A V
=150A
=150A
=600V
3.5 Nm (M5)
=16
Test Conditions
=0V V
=10V
Test Conditions
=0V V
=20V I
=15V I
=0V
=300V
= 15V
n n Outline Drawing
CE
GE
Units
GE
C
C
°C
°C
=150mA
=150A
W
Nm
V
V
V
=600V
= 20V
A
=0V
n n Equivalent Circuit
Min.
Min.
4.5
9900
2200
1000
Typ.
Typ.
0.05
0.6
0.2
0.6
0.2
Max.
Max.
300
0.21
0.47
1.0
7.5
2.8
1.2
0.6
1.0
0.35
3.0
1.0
15
Units
Units
°C/W
mA
mA
µA
pF
ns
V
V
V
µs
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