SS2H10-E3 Vishay Semiconductors, SS2H10-E3 Datasheet

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SS2H10-E3

Manufacturer Part Number
SS2H10-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SS2H10-E3

Date_code
06+
Packing_info
SMB

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Document Number 88750
07-Jul-06
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
Voltage rate of change (rated V
Operating junction and storage temperature range
T
V
I
I
j
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for improved high temperature performance
High-Voltage Surface Mount Schottky Rectifier
DO-214AA (SMB)
R
)
A
= 25 °C unless otherwise noted)
p
= 2.0 µs, 1 kHz
90 V, 100 V
175 °C
0.65 V
10 µA
2.0 A
75 A
L
= 130 °C
SYMBOL
T
V
J
V
I
I
dv/dt
I
V
F(AV)
, T
RRM
RWM
FSM
RRM
FEATURES
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DC
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder Dip 260 °C 40 seconds
• Component in accordance to RoHS 2002/95/EC
STG
of 260 °C
and WEEE 2002/96/EC
Vishay General Semiconductor
SS2H9
MS9
90
90
90
- 65 to + 175
10000
2.0
1.0
75
SS2H9 & SS2H10
SS2H10
MS10
100
100
100
www.vishay.com
UNIT
V/µs
°C
V
V
V
A
A
A
1

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