RN2106 TOSHIBA Semiconductor CORPORATION, RN2106 Datasheet

RN2106

Manufacturer Part Number

RN2106

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN2106.pdf (8 pages)

2.RN2102.pdf (7 pages)

3.RN2106.pdf (8 pages)

4.RN2102.pdf (8 pages)

Specifications of RN2106

Date_code

05+

Packing_info

SOT-523

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RN2106

Manufacturer:

TOSHIBA

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

RN2106F

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 8
Download datasheet (560Kb)

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1101~RN1106

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101, RN2102, RN2103,

RN2104, RN2105, RN2106

RN2101~2106

RN2101~2104

RN2105, 2106

RN2101~2106

Type No.

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

(Ta = 25°C)

http://store.iiic.cc/

Symbol

CBO

CEO

R1 (kΩ)

EBO

stg

4.7

2.2

4.7

R2 (kΩ)

−55~150

Rating

4.7

−100

−50

−10

100

150

−5

JEDEC

JEITA

TOSHIBA

Weight: 2.4 mg (typ.)

Unit

°C

RN2101∼RN2106

2-2H1A

―

2007-11-01

Unit: mm

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