RN1968FS TOSHIBA Semiconductor CORPORATION, RN1968FS Datasheet

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RN1968FS

Manufacturer Part Number
RN1968FS
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheets

Specifications of RN1968FS

Date_code
05+
Packing_info
SOT-563

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RN1968FS
Manufacturer:
RENESAS
Quantity:
200
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Note: Total rating
Two devices are incorporated into a fine pitch Small Mold (6 pin)
Incorporating a bias resistor into a transistor reduces parts count.
Complementary to RN2967FS~RN2969FS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
package.
B
RN1967FS,RN1968FS,RN1969FS
R1
Characteristics
C
E
(Ta = 25°C) (Q1, Q2 common)
RN1967FS~
RN1967FS~
RN1967FS
RN1968FS
RN1969FS
RN1969FS
1969FS
RN1967FS
RN1968FS
RN1969FS
Type No.
Symbol
V
V
V
P
T
CBO
CEO
EBO
C
I
T
stg
C
j
(Note)
R1 (k Ω )
10
22
47
−55~150
Rating
150
20
20
15
50
50
1
6
7
R2 (k Ω )
47
47
22
Unit
mW
mA
°C
°C
V
V
V
RN1967FS~RN1969FS
Weight:0.001g (typ.)
JEDEC
JEITA
TOSHIBA
Equivalent Circuit
(top view)
fS6
0.1±0.05
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
Q1
1
6
1
3
2
1.0±0.05
0.8±0.05
5
2
2-1F1C
2004-04-12
Q2
4
3
4
6
5
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Unit: mm
0.1±0.05

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