RN1106 TOSHIBA Semiconductor CORPORATION, RN1106 Datasheet

RN1106

Manufacturer Part Number

RN1106

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN1103.pdf (7 pages)

2.RN1103.pdf (7 pages)

3.RN1103.pdf (8 pages)

Specifications of RN1106

Date_code

05+

Packing_info

SOT-523

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Part Number

Manufacturer

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Price

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Bonase Electronics (HK) Co., Limited

Part Number:

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Part Number:

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Manufacturer:

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Part Number:

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Part Number:

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Part Number:

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Current page: 1 of 8
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Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Equivalent Circuit and Bias Resister Values

Absolute Maximum Ratings

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2101~ RN2106

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101~1106

RN1101~1104

RN1105, 1106

RN1101~1106

Type No.

RN1101, RN1102, RN1103,

RN1101

RN1102

RN1103

RN1104

RN1105

RN1106

RN1104, RN1105, RN1106

(Ta = 25°C)

http://store.iiic.cc/

R1 (kΩ)

Symbol

4.7

2.2

4.7

CBO

CEO

EBO

stg

R2 (kΩ)

4.7

−55~150

Rating

100

150

JEDEC

JEITA

TOSHIBA

Weight: 2.4 mg (typ).

Unit

°C

RN1101∼RN1106

2-2H1A

―

2007-11-01

Unit: mm

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