MRF18090A Freescale Semiconductor, Inc, MRF18090A Datasheet

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MRF18090A

Manufacturer Part Number
MRF18090A
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheets

Specifications of MRF18090A

Date_code
08+

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for GSM and GSM EDGE cellular radio
applications.
• GSM and GSM EDGE Performances, Full Frequency Band
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for GSM and GSM EDGE base station applications with frequencies
Derate above 25°C
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF18090A
1.80 - 1.88 GHz, 90 W, 26 V
MRF18090AR3
LATERAL N - CHANNEL
CASE 465B - 03, STYLE 1
RF POWER MOSFET
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.43
250
150
200
0.7
NI - 880
Rev. 7, 5/2006
MRF18090AR3
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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