MMUN2132RLT1 Leshan Radio Company, MMUN2132RLT1 Datasheet
MMUN2132RLT1
Manufacturer Part Number
MMUN2132RLT1
Description
Manufacturer
Leshan Radio Company
Specifications of MMUN2132RLT1
Date_code
05+
Packing_info
SOT-23
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-
tor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
Available in 8 mm embossed tape and reel. Use the
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel
This new series of digital transistors is designed to replace a single device and its
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
Derate above 2 C
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
MMUN2115LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2111LT1
Rating
Device
(T
(2)
A
= 2 C unless otherwise noted)
A
= 2 C
PIN1
base
(Input)
(1)
Marking
A6A
A6B
A6C
A6D
A6E
R1
R2
PIN2
Emitter
(Ground)
PIN3
Collector
(output)
Symbol
Symbol
T
R
V
V
J
P
T
I
LESHAN RADIO COMPANY, LTD.
CBO
, T
CEO
C
D
L
JA
R1 (K)
stg
10
22
47
10
10
–65 to +150
Value
Value
200
100
1.6
625
260
50
10
50
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
CASE
SOT– 23 (TO–236AB)
1
B I A S R E S I S T O R
TRANSISTOR
R2 (K)
PNP SILICON
318–08, STYLE 6
10
22
47
47
2
mW C
mAdc
°C/W
Unit
Sec
Unit
mW
Vdc
Vdc
°C
°C
3
Q1–1/7
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