KTC2875 KEC(Korea Electronics), KTC2875 Datasheet

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KTC2875

Manufacturer Part Number

KTC2875

Description

Manufacturer

KEC(Korea Electronics)

Datasheets

1.KTC2875.pdf (3 pages)

2.KTC2875.pdf (3 pages)

3.KTC2875.pdf (3 pages)

Specifications of KTC2875

Date_code

05+

Packing_info

SOT-23

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

KTC2875-A-RTK

Manufacturer:

KEC

Quantity:

56 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

KTC2875-A-RTK/P

Manufacturer:

KEC

Quantity:

24 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

KTC2875-B-RTK/P

Manufacturer:

KEC

Quantity:

180 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

KTC2875-B-RTK/P

Manufacturer:

FAIRCHILD

Quantity:

80 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

KTC2875-B-RTK/P

Manufacturer:

KEC

Quantity:

20 000

Current page: 1 of 3
Download datasheet (402Kb)

2003. 2. 25

FOR MUTING AND SWITCHING APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : h

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Switching

Time

High Emitter-Base Voltage : V

High Reverse h

Low on Resistance : R

: Reverse h

FE

CHARACTERISTIC

CHARACTERISTIC

Classification

FE

FE

=150(Typ.) (V

Turn-on Time

Storage Time

Fall Time

ON

B: 350 1200

=1 (Typ.), (I

Revision No : 2

SEMICONDUCTOR

CE

EBO

=-2V, I

=25V(Min.)

TECHNICAL DATA

B

SYMBOL

C

SYMBOL

=5mA)

=-2mA)

V

I

I

V

V

V

V

h

CE(sat)

C

CBO

EBO

t

t

T

f

stg

t

P

on

I

I

T

FE

CBO

CEO

EBO

BE

T

ob

f

stg

C

B

C

j

10V

DUTY CYCLE

V

V

V

I

V

V

V

C

-55 150

RATING

CB

EB

CE

CE

CE

CB

=30mA, I

=25V, I

=2V, I

=2V, I

=6V, I

=50V, I

=10V, I

300

150

150

50

20

25

60

1µs

< =

C

C

C

INPUT

=4mA

B

=4mA

=4mA

2%

C

E

E

TEST CONDITION

=0

=0

=3mA

=0, f=1MHz

UNIT

mW

mA

mA

V

V

V

4kΩ

V

BB

=-3V

V

EPITAXIAL PLANAR NPN TRANSISTOR

CC

OUTPUT

=12V

Type Name

Marking

L

h

2

1

MIN.

1. EMITTER

2. BASE

3. COLLECTOR

FE

P

350

-

-

-

-

-

-

-

-

-

Rank

KTC2875

E

B

SOT-23

M

M

P

3

L

0.042

TYP.

0.61

160

500

130

4.8

30

-

-

-

DIM

A

G

B

C

D

E

H

J

K

L

M

N

P

MAX.

1200

0.1

0.1

0.3

7

-

-

-

-

-

MILLIMETERS

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

0.13+0.10/-0.05

1.00+0.20/-0.10

0.00 ~ 0.10

Lot No.

1.30 MAX

0.20 MIN

2.93 0.20

1.90

0.95

0.55

7

+ _

UNIT

MHz

pF

nS

V

V

A

A

1/3

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