KTA2012V KEC(Korea Electronics), KTA2012V Datasheet
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KTA2012V
Manufacturer Part Number
KTA2012V
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KTA2012V.pdf
(3 pages)
Specifications of KTA2012V
Date_code
10+
Packing_info
SOT-523
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KTA2012V-RTK/P
Manufacturer:
SIS
Quantity:
12
Part Number:
KTA2012V-RTK/P
Manufacturer:
KEC
Quantity:
20 000
2002. 2. 20
SWITCHING APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
* Single pulse Pw=1mS.
ELECTRICAL CHARACTERISTICS (Ta=25 )
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
A Collector Current is Large.
Collector Saturation Voltage is low.
Complementary to KTC4072V.
: V
CE(sat)
CHARACTERISTIC
CHARACTERISTIC
-250mV at I
C
Revision No : 1
=-200mA/I
SEMICONDUCTOR
TECHNICAL DATA
SYMBOL
B
=-10mA.
V
V
V
SYMBOL
T
I
P
V
V
V
CBO
I
T
CEO
EBO
CP
stg
V
C
C
j
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
h
C
*
CBO
f
FE
T
ob
RATING
-55 150
-500
100
150
-15
-12
V
I
I
I
V
I
V
V
-6
-1
C
C
E
C
CB
=-10 A
CE
CE
CB
=-10 A
=-1mA
=-200mA, I
=-2V, I
=-2V, I
=-15V, I
=-10V, I
UNIT
TEST CONDITION
mW
mA
C
C
V
V
V
A
=-10mA
=-10mA, f
E
E
=0
B
=0, f=1MHz
=-10mA
T
=100MHz
EPITAXIAL PLANAR PNP TRANSISTOR
1. EMITTER
2. BASE
3. COLLECTOR
Marking
2
1
P
MIN.
270
-15
-12
-6
KTA2012V
-
-
-
-
E
B
S Z
VSM
P
TYP.
3
-100
260
6.5
-
-
-
-
-
Type Name
DIM MILLIMETERS
A
D
G
H
K
B
C
E
P
J
MAX.
-100
-250
680
-
-
-
-
-
0.12 0.05
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.2 0.05
0.40
+ _
+ _
+ _
+ _
+ _
+ _
+ _
+ _
5
UNIT
MHz
mV
nA
pF
V
V
V
-
1/3