KTA2012E KEC(Korea Electronics), KTA2012E Datasheet

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KTA2012E

Manufacturer Part Number

KTA2012E

Description

Manufacturer

KEC(Korea Electronics)

Datasheet

1.KTA2012E.pdf (3 pages)

Specifications of KTA2012E

Date_code

05+

Packing_info

SOT-523

Current page: 1 of 3
Download datasheet (73Kb)

2002. 2. 20

SWITCHING APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

* Single pulse Pw=1mS.

ELECTRICAL CHARACTERISTICS (Ta=25 )

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Collector Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

A Collector Current is Large.

Collector Saturation Voltage is low.

Complementary to KTC4072E.

: V

CE(sat)

CHARACTERISTIC

CHARACTERISTIC

-250mV at I

C

Revision No : 1

=-200mA/I

SEMICONDUCTOR

TECHNICAL DATA

SYMBOL

B

=-10mA.

V

V

V

SYMBOL

T

I

P

V

V

V

CBO

I

T

CEO

EBO

CP

stg

V

C

C

j

(BR)CBO

(BR)CEO

(BR)EBO

I

CE(sat)

h

C

*

CBO

f

FE

T

ob

RATING

-55 150

-500

100

150

-15

-12

V

I

I

I

V

I

V

V

-6

-1

C

C

E

C

CB

=-10 A

CE

CE

CB

=-10 A

=-1mA

=-200mA, I

=-2V, I

=-2V, I

=-15V, I

=-10V, I

UNIT

TEST CONDITION

mW

mA

C

C

V

V

V

A

=-10mA

=-10mA, f

E

E

=0

B

=0, f=1MHz

=-10mA

T

=100MHz

EPITAXIAL PLANAR PNP TRANSISTOR

1. EMITTER

2. BASE

3. COLLECTOR

Marking

2

1

MIN.

270

-15

-12

-6

KTA2012E

E

B

-

-

-

-

S Z

3

ESM

TYP.

-100

260

6.5

-

-

-

-

-

D

J

Type Name

DIM

A

B

C

D

E

G

H

J

MAX.

-100

-250

680

-

-

-

-

-

MILLIMETERS

0.27+0.10/-0.05

1.60 0.10

0.85 0.10

0.70 0.10

1.60 0.10

1.00 0.10

0.13 0.05

0.50

+ _

+ _

+ _

+ _

+ _

+ _

UNIT

MHz

mV

nA

pF

V

V

V

-

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