KRC860E KEC(Korea Electronics), KRC860E Datasheet
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KRC860E
Manufacturer Part Number
KRC860E
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KRC860E.pdf
(4 pages)
Specifications of KRC860E
Date_code
04+
Packing_info
SOT-563
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KRC860E
Manufacturer:
NXP
Quantity:
3 810
2002. 7. 10
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
MARK SPEC
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
CHARACTERISTIC
R1
CHARACTERISTIC
KRC860E
NK
C
E
Revision No : 2
KRC861E
SEMICONDUCTOR
NM
SYMBOL
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
V
V
V
EQUIVALENT CIRCUIT (TOP VIEW)
CBO
I
CEO
EBO
TECHNICAL DATA
C
KRC862E
RATING
NN
100
Q1
50
50
5
SYMBOL
6
1
V
I
I
CE(sat)
f
h
CBO
EBO
R
T
FE
1
*
5
2
UNIT
KRC863E
mA
V
V
V
NO
4
3
V
V
V
I
V
C
Q2
CB
EB
CE
CE
=10mA, I
=5V, I
=5V, I
=10V, I
=50V, I
* Total Rating.
TEST CONDITION
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
KRC864E
C
C
NP
CHARACTERISTIC
=0
=1mA
B
E
C
=0.5mA
=0
=5mA
EPITAXIAL PLANAR NPN TRANSISTOR
KRC860E~KRC864E
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
Marking
1
2
3
1
1
2
2
2
1
P
6
1
MIN.
120
-
-
-
-
-
-
-
-
-
B1
B
SYMBOL
5
2
P
T
T
TES6
C
stg
4
3
j
P
TYP.
*
250
100
0.1
4.7
Type Name
10
22
47
6
5
4
-
-
-
RATING
-55 150
DIM
A1
B1
MAX.
A
B
C
D
H
200
150
J
P
100
100
0.3
-
-
-
-
-
-
-
MILLIMETERS
0.12 0.05
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.2 0.05
0.5 0.05
0.50
+ _
+ _
+ _
+ _
+ _
+ _
+ _
5
UNIT
UNIT
MHz
mW
k
nA
nA
V
1/4