KRC830U KEC(Korea Electronics), KRC830U Datasheet
KRC830U
Manufacturer Part Number
KRC830U
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KRC830U.pdf
(4 pages)
Specifications of KRC830U
Date_code
05+
Packing_info
SOT-363
2002. 7. 10
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
MARK SPEC
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
CHARACTERISTIC
R1
CHARACTERISTIC
KRC830U
YK
C
E
Revision No : 2
KRC831U
SEMICONDUCTOR
YM
SYMBOL
KRC830U
KRC831U
KRC832U
KRC833U
KRC834U
V
V
V
EQUIVALENT CIRCUIT (TOP VIEW)
CBO
I
CEO
EBO
TECHNICAL DATA
C
KRC832U
RATING
YN
Q1
100
50
50
5
6
1
SYMBOL
V
I
I
CE(sat)
f
h
CBO
EBO
R
T
FE
1
*
5
2
UNIT
KRC833U
mA
V
V
V
YO
4
3
V
V
V
I
V
C
Q2
CB
EB
CE
CE
=10mA, I
=5V, I
=5V, I
=10V, I
=50V, I
* Total Raing.
TEST CONDITION
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
KRC834U
C
C
YP
CHARACTERISTIC
=0
=1mA
B
E
C
=0.5mA
=0
=5mA
EPITAXIAL PLANAR NPN TRANSISTOR
KRC830U~KRC834U
Marking
1. Q EMITTER
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
3
1
2
2
2
1
1
1
6
MIN.
120
G
B1
B
-
-
-
-
-
-
-
-
-
5
2
SYMBOL
P
T
US6
4
3
T
C
stg
6
5
Type Name
4
j
TYP.
*
250
100
0.1
4.7
10
22
47
T
-
-
-
D
DIM
RATING
-55 150
A1
B1
A
D
G
H
B
C
T
MAX.
200
150
100
100
0.3
MILLIMETERS
-
-
-
-
-
-
-
0.2+0.10/-0.05
0.15+0.1/-0.05
2.00 0.20
1.25 0.1
1.3 0.1
2.1 0.1
0.9 0.1
0-0.1
0.65
+ _
+ _
+ _
+ _
+ _
UNIT
UNIT
MHz
mW
k
nA
nA
V
1/4
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