KRA755E KEC(Korea Electronics), KRA755E Datasheet

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KRA755E

Manufacturer Part Number
KRA755E
Description
Manufacturer
KEC(Korea Electronics)
Datasheets

Specifications of KRA755E

Date_code
05+
Packing_info
SOT-523
2003. 12. 23
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
* Total Rating.
MARK SPEC
IN
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
R1
KRA751E
COMMON(+)
PA
R2
OUT
CHARACTERISTIC
KRA752E
Revision No : 2
PB
SEMICONDUCTOR
TECHNICAL DATA
BIAS RESISTOR VALUES
KRA753E
TYPE NO.
KRA751E
KRA752E
KRA753E
KRA754E
KRA755E
KRA756E
PC
KRA751E 756E
KRA751E 756E
KRA751E
KRA752E
KRA753E
KRA754E
KRA755E
KRA756E
KRA754E
R1(k )
PD
4.7
2.2
4.7
10
22
47
KRA755E
R2(k )
PE
4.7
10
22
47
47
47
SYMBOL
P
T
V
V
I
T
D
O
stg
O
I
j
*
KRA756E
PF
EPITAXIAL PLANAR PNP TRANSISTOR
EQUIVALENT CIRCUIT (TOP VIEW)
KRA751E~KRA756E
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q OUT (COLLECTOR)
4. Q COMMON (EMITTER)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
Marking
1
2
3
1
1
2
1
2
2
P
-55 150
RATING
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
-100
1
6
200
150
-50
Q1
B1
B
6
1
5
2
TES6
P
5
2
4
3
6
5
4
Type Name
4
3
Q2
DIM
A1
B1
A
B
C
D
H
J
P
MILLIMETERS
0.12 0.05
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.2 0.05
0.5 0.05
0.50
+ _
+ _
+ _
+ _
+ _
+ _
+ _
5
UNIT
mW
mA
V
V
1/6

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