KRA560U KEC(Korea Electronics), KRA560U Datasheet
KRA560U
Manufacturer Part Number
KRA560U
Description
Manufacturer
KEC(Korea Electronics)
Datasheet
1.KRA560U.pdf
(4 pages)
Specifications of KRA560U
Date_code
06+
Packing_info
SOT-353
2002. 7. 9
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
MARK SPEC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
B
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
MARK
TYPE
CHARACTERISTIC
R1
CHARACTERISTIC
KRA560U
PK
Revision No : 3
C
E
SEMICONDUCTOR
KRA561U
KRA560U
KRA561U
KRA562U
KRA563U
KRA564U
SYMBOL
PM
V
V
V
TECHNICAL DATA
EQUIVALENT CIRCUIT (TOP VIEW)
I
CBO
CEO
EBO
C
KRA562U
RATING
-100
PN
-50
-50
-5
Q1
SYMBOL
5
1
V
I
I
CE(sat)
f
h
CBO
EBO
R
T
FE
1
*
2
UNIT
mA
KRA563U
V
V
V
PO
Q2
4
3
V
V
V
I
V
C
CB
EB
CE
CE
=-10mA, I
* Total Rating.
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
=-5V, I
=-5V, I
=-10V, I
=-50V, I
TEST CONDITION
CHARACTERISTIC
KRA564U
C
C
=0
=-1mA
B
E
C
=-0.5mA
=0
=-5mA
PP
EPITAXIAL PLANAR PNP TRANSISTOR
KRA560U~KRA564U
1. Q IN (BASE)
2. Q , Q COMMON (EMITTER)
3. Q IN (BASE)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
Marking
1
2
3
1
1
2
2
1
2
G
1
5
B1
MIN.
B
120
-
-
-
-
-
-
-
-
-
SYMBOL
2
P
T
USV
T
C
5
stg
4
j
*
TYP.
4
3
-0.1
250
100
T
D
4.7
10
22
47
Type Name
-
-
-
DIM
A1
B1
-55 150
RATING
A
B
C
D
G
H
T
MAX.
200
150
-100
-100
-0.3
MILLIMETERS
0.2+0.10/-0.05
0.15+0.1/-0.05
-
-
-
-
-
-
-
2.00 0.20
1.3 0.1
1.25 0.1
2.1 0.1
0.9 0.1
0-0.1
0.65
+ _
+ _
+ _
+ _
+ _
UNIT
UNIT
MHz
mW
k
nA
nA
V
1/4
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