AT49BV512-90VU ATMEL Corporation, AT49BV512-90VU Datasheet

AT49BV512-90VU

Manufacturer Part Number

AT49BV512-90VU

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT49BV512.pdf (18 pages)

Specifications of AT49BV512-90VU

Date_code

06+

Packing_info

TSOP

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Features

•

1. Description

The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of

8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the

devices offer access times to 90 ns with power dissipation of just 90 mW over the

commercial temperature range. When the devices are deselected, the CMOS standby

current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49BV512 does not require

high input voltages for programming. Three-volt only commands determine the read

and programming operation of the device. Reading data out of the device is similar to

reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing

the entire 1 megabit of memory and then programming on a byte-by-byte basis. The

typical byte programming time is a fast 30 µs. The end of a program cycle can be

optionally detected by the DATA polling feature. Once the end of a byte program cycle

has been detected, a new access for a read or program can begin. The typical num-

ber of program and erase cycles is in excess of 10,000 cycles.

The optional 8K bytes boot block section includes a reprogramming write lock out fea-

ture to provide data integrity. The boot sector is designed to contain user secure code,

and when the feature is enabled, the boot sector is permanently protected from being

reprogrammed.

Single Supply Voltage Range, 2.7V to 3.6V

Single Supply for Read and Write

Fast Read Access Time – 90 ns

Internal Program Control and Timer

8K Bytes Boot Block with Lockout

Fast Erase Cycle Time – 10 Seconds

Byte-by-byte Programming – 30 µs/Byte Typical

Hardware Data Protection

DATA Polling for End of Program Detection

Low Power Dissipation

Typical 10,000 Write Cycles

Green (Pb/Halide-free) Packaging Option

– 25 mA Active Current

– 50 µA CMOS Standby Current

512K (64K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

AT49BV512

1026G–FLASH–10/05

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