2N7269 International Rectifier Corp., 2N7269 Datasheet

2N7269

Manufacturer Part Number

2N7269

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.2N7269.pdf (12 pages)

Specifications of 2N7269

Date_code

95+

Packing_info

TO-3P

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N7269

Manufacturer:

AUK

Quantity:

20 000

Current page: 1 of 12
Download datasheet (272Kb)

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

International Rectifier’s RADHard HEXFET

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

For footnotes refer to the last page

Absolute Maximum Ratings

I D @ V GS = 12V, T C = 100°C Continuous Drain Current

I D @ V GS = 12V, T C = 25°C

www.irf.com

Product Summary

Part Number Radiation Level

IRHM7250

IRHM3250

IRHM4250

IRHM8250

P D @ T C = 25°C

T STG

dv/dt

V GS

E AS

E AR

I DM

I AR

T J

1000K Rads (Si) 0.10

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

Parameter

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

0.10

DS(on)

technol-

26A

QPL Part Number

JANSR2N7269

JANSF2N7269

JANSG2N7269

JANSH2N7269

RAD Hard

300 (0.063 in. (1.6mm) from case for 10s)

Features:

Single Event Effect (SEE) Hardened

Low R

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

™

REF: MIL-PRF-19500/603

HEXFET

9.3 (Typical)

DS(on)

-55 to 150

200V, N-CHANNEL

JANSR2N7269

104

150

±20

500

1.2

5.0

TECHNOLOGY

IRHM7250

TO-254AA

Pre-Irradiation

PD - 90674C

Units

W/°C

V/ns

10/11/00

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