AT29LV040A20TC ATMEL Corporation, AT29LV040A20TC Datasheet

AT29LV040A20TC

Manufacturer Part Number

AT29LV040A20TC

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT29LV040A15JI.pdf (16 pages)

Specifications of AT29LV040A20TC

Case

TSSOP

Date_code

06+

Current page: 1 of 16
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Features

•

1. Description

The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 150 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 40 µA. The device

endurance is such that any sector can typically be written to in excess of 10,000

times. The programming algorithm is compatible with other devices in Atmel’s 3-volt

only Flash memories.

To allow for simple in-system reprogrammability, the AT29LV040A does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

Single Voltage, Range 3V to 3.6V Supply

3-volt Only Read and Write Operation

Software Protected Programming

Fast Read Access Time – 150 ns

Low Power Dissipation

Sector Program Operation

Two 16K Bytes Boot Blocks with Lockout

Fast Sector Program Cycle Time – 20 ms Max

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

Green (Pb/Halide-free) Packaging Option

– 15 mA Active Current

– 40 µA CMOS Standby Current

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

4-megabit

(512K x 8)

3-volt Only

256-byte Sector

Flash Memory

AT29LV040A

0334G–FLASH–2/05

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