AT45DB321D-CNU ATMEL Corporation, AT45DB321D-CNU Datasheet

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AT45DB321D-CNU

Manufacturer Part Number
AT45DB321D-CNU
Description
Manufacturer
ATMEL Corporation
Datasheets

Specifications of AT45DB321D-CNU

Case
QFN8
Date_code
06+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB321D-CNU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Features
1. Description
The AT45DB321D is a 2.7-volt, serial-interface sequential access Flash memory
ideally suited for a wide variety of digital voice-, image-, program code- and data-stor-
age applications. The AT45DB321D supports RapidS serial interface for applications
requiring very high speed operations. RapidS serial interface is SPI compatible for
frequencies up to 66 MHz. Its 34,603,008 bits of memory are organized as 8,192
pages of 512 bytes or 528 bytes each. In addition to the main memory, the
AT45DB321D also contains two SRAM buffers of 512/528 bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-
ity) is easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple
address lines and a parallel interface, the DataFlash uses a RapidS serial interface to
Single 2.7V - 3.6V Supply
RapidS
User Configurable Page Size
Page Program Operation
Flexible Erase Options
Two SRAM Data Buffers (512/528 Bytes)
Continuous Read Capability through Entire Array
Low-power Dissipation
Hardware and Software Data Protection Features
Sector Lockdown for Secure Code and Data Storage
Security: 128-byte Security Register
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
– SPI Compatible Modes 0 and 3
– 512 Bytes per Page
– 528 Bytes per Page
– Intelligent Programming Operation
– 8,192 Pages (512/528 Bytes/Page) Main Memory
– Page Erase (512 Bytes)
– Block Erase (4 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (32 Mbits)
– Allows Receiving of Data while Reprogramming the Flash Array
– Ideal for Code Shadowing Applications
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 5 µA Deep Power Down Typical
– Individual Sector
– Individual Sector
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
Serial Interface: 66 MHz Maximum Clock Frequency
32-megabit
2.7-volt
DataFlash
AT45DB321D
Preliminary
3597H–DFLASH–02/07
®

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