AT49BV6416CT ATMEL Corporation, AT49BV6416CT Datasheet
AT49BV6416CT
Manufacturer Part Number
AT49BV6416CT
Description
Manufacturer
ATMEL Corporation
Specifications of AT49BV6416CT
Case
TSSOP
Date_code
07+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT49BV6416CT-70CU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
AT49BV6416CT-70CU-J
Manufacturer:
ATMEL
Quantity:
575
Part Number:
AT49BV6416CT-70TI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV6416CT-70TU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV6416CT-CI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Features
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1. Description
The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for In-System
programming. The device can operate in the asynchronous or page read mode.
The AT49BV6416C(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane.
The VPP pin provides data protection and faster programming times. When the V
input is below 0.7V, the program and erase functions are inhibited. When V
1.65V or above, normal program and erase operations can be performed. With V
10.0V, the program (Dual-word Program command) operation is accelerated.
64-megabit (4M x 16) Flash Memory
2.7V - 3.6V Read/Write
High Performance
Sector Erase Architecture
Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not
Being Programmed/Erased
Suspend/Resume Feature for Erase and Program
Low-power Operation
2.2V I/O Option Reduces Overall System Power
VPP Pin for Write Protection and Accelerated Program/Erase Operations
Reset Input for Device Initialization
CBGA Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
– Memory Plane A: 16M Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M Memory Consisting of 32K Word Sectors
– Supports Reading and Programming Data from Any Sector by Suspending Erase
– Supports Reading Any Word by Suspending Programming of Any Other Word
– 30 mA Active
– 35 µA Standby
of a Different Sector
PP
PP
is at
PP
at
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416C
AT49BV6416CT
Not Recommended
for New Designs.
Use AT49BV640D(T).
3465D–FLASH–04/06
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