AT49BV802AT70TU ATMEL Corporation, AT49BV802AT70TU Datasheet

AT49BV802AT70TU

Manufacturer Part Number

AT49BV802AT70TU

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT49BV802AT70TU.pdf (31 pages)

Specifications of AT49BV802AT70TU

Case

TSSOP

Date_code

06+

Current page: 1 of 31
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Features

•

1. Description

The AT49BV802A(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288

words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on

I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sec-

tors for erase operations. The AT49BV802A(T) is offered in a 48-lead TSOP and a

48-ball CBGA package. The device has CE and OE control signals to avoid any bus

contention. This device can be read or reprogrammed using a single power supply,

making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the

device in other operation modes such as program and erase. The device has the

capability to protect the data in any sector (see

To increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

time and let the user read data from or program data to any of the remaining sectors

within the memory. The end of a program or an erase cycle is detected by the

READY/BUSY pin, Data Polling or by the toggle bit.

Single Voltage Read/Write Operation: 2.65V to 3.6V

Access Time – 70 ns

Sector Erase Architecture

Fast Byte/Word Program Time – 12 µs

Fast Sector Erase Time – 300 ms

Suspend/Resume Feature for Erase and Program

Low-power Operation

Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

RESET Input for Device Initialization

Sector Lockdown Support

TSOP and CBGA Package Options

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Minimum 100,000 Erase Cycles

Common Flash Interface (CFI)

Green (Pb/Halide-free) Packaging Option

– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

– Supports Reading and Programming from Any Sector by Suspending Erase

– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending

– 12 mA Active

– 13 µA Standby

of a Different Sector

Programming of Any Other Byte/Word

“Sector Lockdown”

section).

8-megabit

(512K x 16/

1M x 8)

3-volt Only

Flash Memory

AT49BV802A

AT49BV802AT

Not Recommended

for New Designs.

3405E–FLASH–2/07

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