RFT3055LE Intersil Corporation, RFT3055LE Datasheet

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RFT3055LE

Manufacturer Part Number
RFT3055LE
Description
Manufacturer
Intersil Corporation
Datasheets

Specifications of RFT3055LE

Case
TO-223
Date_code
08+
2.0A, 60V, 0.150 Ohm, N-Channel, Logic
Level, ESD Rated, Power MOSFET
This product is an N-Channel power MOSFET manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49158.
Ordering Information
NOTE: RFT3055LE is available only in tape and reel.
Packaging
RFT3055LE
PART NUMBER
SOT-223
PACKAGE
8-143
Data Sheet
3055L
(FLANGE)
BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
DRAIN
SOT-223
GATE
http://www.intersil.com or 407-727-9207
Features
• 2.0A, 60V
• r
• 2kV ESD Protected
• Temperature Compensating PSPICE
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- TB334, “Guidelines for Soldering Surface Mount
DRAIN
DS(ON)
Components to PC Boards”
SOURCE
August 1999
= 0.150
PSPICE® is a registered trademark of MicroSim Corporation.
G
|
Copyright
D
File Number 4537.3
S
RFT3055LE
©
®
Intersil Corporation 1999
Model

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