TE28F008SA100 Intel Corporation, TE28F008SA100 Datasheet

TE28F008SA100

Manufacturer Part Number

TE28F008SA100

Description

Manufacturer

Intel Corporation

Datasheet

1.TE28F008SA100.pdf (42 pages)

Specifications of TE28F008SA100

Case

TSOP40

Date_code

2006+

Current page: 1 of 42
Download datasheet (532Kb)

The 5 Volt FlashFile™ memory 28F008SA’s extended cycling, symmetrically blocked architecture, fast

access time, write automation and low power consumption provide a more reliable, lower power, lighter

weight and higher performance alternative to traditional rotating disk technology. The 28F008SA brings new

capabilities to portable computing. Application and operating system software stored in resident flash memory

arrays provide instant-on, rapid eXecute-In-Place (XIP) and protection from obsolescence through in-system

software updates. Resident software also extends system battery life and increases reliability by reducing

disk drive accesses.

For high-density data acquisition applications, the 28F008SA offers a more cost-effective and reliable

alternative

telecommunications, can take advantage of the 28F008SA’s nonvolatility, blocking and minimal system code

requirements for flexible firmware and modular software designs.

The 28F008SA is offered in 40-lead TSOP and 44-lead PSOP packages. Pin assignments simplify board

layout when integrating multiple devices in a flash memory array or subsystem. This device uses an

integrated Command User Interface and state machine for simplified block erasure and byte write. The

28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks.

Intel

immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media.

A deep power-down mode lowers power consumption to 1 µW typical through V

computing, handheld instrumentation and other low-power applications. The RP# power control input also

provides absolute data protection during system power-up/down.

Manufactured on Intel

quality, reliability and cost-effectiveness.

NOTE: This document formerly known as 28F008SA 8-Mbit (1-Mbit x 8) FlashFile™ Memory .

December 1998

High-Density Symmetrically-Blocked

Architecture

— Sixteen 64-Kbyte Blocks

Extended Cycling Capability

— 100,000 Block Erase Cycles

— 1.6 Million Block Erase Cycles

Automated Byte Write and Block Erase

— Command User Interface

— Status Register

System Performance Enhancements

— RY/BY# Status Output

— Erase Suspend Capability

28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise

per Chip

SRAM

0.4 micron ETOX V process technology, the 28F008SA provides the highest levels of

and

5 VOLT FlashFile™ MEMORY

battery.

Traditional

28F008SA (x8)

high-density

Deep Power-Down Mode

— 0.20 µA I

Very High-Performance Read

— 85 ns Maximum Access Time

SRAM-Compatible Write Interface

Hardware Data Protection Feature

— Erase/Write Lockout during Power

Industry Standard Packaging

— 40-Lead TSOP, 44-Lead PSOP

ETOX™ V Nonvolatile Flash

Technology

— 12 V Byte Write/Block Erase

Transitions

embedded

Typical

applications,

PRELIMINARY

Order Number: 290429-008

, crucial in portable

such

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