PM30RMC060 MITSUBISHI, PM30RMC060 Datasheet

PM30RMC060

Manufacturer Part Number

PM30RMC060

Description

Manufacturer

MITSUBISHI

Datasheet

1.PM30RMC060.pdf (31 pages)

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6.0 Introduction to Intelligent

Mitsubishi Intelligent Power Mod-

ules (IPMs) are advanced hybrid

power devices that combine high

speed, low loss IGBTs with opti-

mized gate drive and protection cir-

cuitry. Highly effective over-current

and short-circuit protection is real-

ized through the use of advanced

current sense IGBT chips that al-

low continuous monitoring of power

device current. System reliability is

further enhanced by the IPM’s inte-

grated over temperature and under

voltage lock out protection. Com-

pact, automatically assembled In-

telligent Power Modules are de-

signed to reduce system size, cost,

and time to market. Mitsubishi

Electric introduced the first full line

of Intelligent Power Modules in No-

vember, 1991. Continuous im-

provements in power chip, packag-

ing, and control circuit technology

have lead to the IPM lineup shown

in Table 6.1.

6.0.1 Third Generation Intelli-

Mitsubishi third generation intelli-

gent power module family shown in

Table 6.1 represents the industries

most complete line of IPMs. Since

their original introduction in 1993

the series has been expanded to

include 36 types with ratings rang-

ing from 10A 600V to 800A 1200V.

The power semiconductors used in

these modules are based on the

field proven H-Series IGBT and di-

ode processes. In Table 6.1 the

third generation family has been di-

vided into two groups, the “Low

Profile Series” and “High Power

Series” based on the packaging

technology that is used. The third

Power Modules (IPM)

gent Power Modules

generation IPM has been optimized

for minimum switching losses in or-

der to meet industry demands for

acoustically noiseless inverters

with carrier frequencies up to

20kHz. The built in gate drive and

protection has been carefully de-

signed to minimize the components

required for the user supplied inter-

face circuit.

6.0.2 V-Series High Power IPMs

The V-Series IPM was developed

in order to address newly emerging

industry requirements for higher re-

liability, lower cost and reduced

EMI. By utilizing the low inductance

packaging technology developed

Table 6.1 Mitsubishi Intelligent Power Modules

Type Number

Third Generation Low Profile Series - 600V

PM10CSJ060

PM15CSJ060

PM20CSJ060

PM30CSJ060

PM50RSK060

PM75RSK060

Third Generation Low Profile Series - 1200V

PM10CZF120

PM10RSH120

PM15CZF120

PM15RSH120

PM25RSK120

Third Generation High Power Series - 600V

PM75RSA060

PM100CSA060 100 Six IGBTs

PM100RSA060 100 Six IGBTs + Brake ckt.

PM150CSA060 150 Six IGBTs

PM150RSA060 150 Six IGBTs + Brake ckt.

PM200CSA060 200 Six IGBTs

PM200RSA060 200 Six IGBTs + Brake ckt.

PM200DSA060 200 Two IGBTs: Half Bridge

PM300DSA060 300 Two IGBTs: Half Bridge

PM400DAS060 400 Two IGBTs: Half Bridge

PM600DSA060 600 Two IGBTs: Half Bridge

PM800HSA060 800 One IGBT

USING INTELLIGENT POWER MODULES

MITSUBISHI SEMICONDUCTORS POWER MODULES MOS

http://store.iiic.cc/

Amps Power Circuit

Six IGBTs

Six IGBTs + Brake ckt.

Six IGBTs

Six IGBTs + Brake ckt.

Six IGBTs

Six IGBTs + Brake ckt.

Type Number

Third Generation High Power Series - 1200V

PM25RSB120

PM50RSA120

PM75CSA120

PM75DSA120

PM100CSA120 100 Six IGBTs

PM100DSA120 100 Two IGBTs: Half Bridge

PM150DSA120 150 Two IGBTs: Half Bridge

PM200DSA120 200 Two IGBTs: Half Bridge

PM300DSA120 300 Two IGBTs: Half Bridge

PM400HSA120 400 Two IGBTs: Half Bridge

PM600HSA120 600 One IGBT

PM800HSA120 800 One IGBT

V-Series High Power - 600V

PM75RVA060

PM100CVA060 100 Six IGBTs

PM150CVA060 150 Six IGBTs

PM200CVA060 200 Six IGBTs

PM300CVA060 300 Six IGBTs

PM400DVA060 400 Two IGBTs: Half Bridge

PM600DVA060 600 Two IGBTs: Half Bridge

V-Series High Power - 1200V

PM50RVA120

PM75CVA120

PM100CVA120 100 Six IGBTs

PM150CVA120 150 Six IGBTs

PM200DVA120 200 Two IGBTs: Half Bridge

PM300DVA120 300 Two IGBTs: Half Bridge

for the U-Series IGBT module (de-

scribed in Section 4.1.5) combined

with an advanced super soft free-

wheel diode and optimized gate

drive and protection circuits the V-

Series IPM family achieves im-

proved performance at reduced

cost. The detailed descriptions of

IPM operation and interface re-

quirements presented in Sections

6.1 through 6.8 apply to V-Series

as well as third generation IPMs.

The only exception being that V-

Series IPMs have a unified short

circuit protection function that takes

the place of the separate short cir-

cuit and over current functions de-

scribed in Sections 6.4.4 and 6.4.5.

The unified protection was made

Amps Power Circuit

Six IGBTs + Brake ckt.

Six IGBTs

Two IGBTs: Half Bridge

Six IGBTs

Sep.1998

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