AM29LV641ML AMD [Advanced Micro Devices], AM29LV641ML Datasheet - Page 54

• Manufacturer Part Number: AM29LV641ML
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Maximum values are measured at V
3. Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word basis for a 16-word write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
52
Parameter
Sector Erase Time
Chip Erase Time
Single Word Program Time (Note 3)
Accelerated Single Word Program Time
(Note 3)
Total Write Buffer Program Time
(Note 4)
Effective Word Program Time, using the
Write Buffer (Note 5)
Total Accelerated Write Buffer Program
Time (Note 4)
Effective Accelerated Word Program
Time, using the Write Buffer (Note 4)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
all bits are programmed to 00h.
program/erase cycles.
further information on command definitions.
Current
Description
SS
SS
CC
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
Typ (Note 1)
17.6
100
352
282
0.5
64
90
22
D A T A S H E E T
CC
Am29LV641MH/L
= 3.0 V, one pin at a time.
Max (Note 2)
1800
1560
128
720
113
800
15
98
Unit
sec
sec
µs
µs
µs
µs
µs
µs
–100 mA
–1.0 V
–1.0 V
Min
CC
. Programming specifications assume that
Excludes system level overhead (Note 7)
Excludes 00h programming prior to
erasure (Note 6)
Comments
December 21, 2005
V
+100 mA
CC
12.5 V
Max
+ 1.0 V
10
for