AM29LV2562M AMD [Advanced Micro Devices], AM29LV2562M Datasheet - Page 55

• Manufacturer Part Number: AM29LV2562M
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 doublewords/1–32 words programmed.
4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
5. AC specifications listed are tested with V
December 16, 2005
JEDEC
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
DVWH
WHDX
GHWL
WHEH
WLWH
WHDL
AVWL
WLAX
ELWL
AVAV
Parameter
t
t
t
WHWH1
WHWH2
t
Std.
GHWL
t
t
t
OEPH
t
t
t
t
t
t
t
t
t
WPH
t
ASO
AHT
VHH
VCS
WC
WP
AH
DS
DH
CS
CH
AS
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation
(Notes 2, 4)
Accelerated Effective Write Buffer Program
Operation (Notes 2, 4)
Single Doubleword/Word Program
Operation (Note 2)
Accelerated Single Doubleword/Word
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
V
V
HH
CC
Rise and Fall Time (Note 1)
Setup Time (Note 1)
IO
= V
CC
. Contact AMD for information on AC operation when V
D A T A S H E E T
Am29LV2562M
Per Doubleword
Per Doubleword
Doubleword
Doubleword
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Typ
Min
Min
IO
≠ V
120R
6.25
12.5
CC
120
240
250
7.5
0.5
15
45
45
20
35
30
15
60
60
54
54
50
0
0
0
0
0
0
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
µs
ns
µs
53