AM29LV200 AMD [Advanced Micro Devices], AM29LV200 Datasheet

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... PRELIMINARY Am29LV200 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3 ...

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... GENERAL DESCRIPTION The Am29LV200 Mbit, 3.0 volt-only Flash memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7– DQ0. This device is designed to be programmed in- system using only a single 3 ...

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... CC = 2.7–3 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV200 Am29LV200 -100 -120 -150 100 120 150 100 120 150 – DQ0 DQ15 (A-1) Input/Output Buffers Data STB Latch ...

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... CC 13 DQ11 14 DQ3 DQ10 15 16 DQ2 17 DQ9 18 DQ1 19 DQ8 20 DQ0 Standard TSOP Reverse TSOP Am29LV200 48 A16 47 BYTE DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 DQ11 35 DQ3 ...

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... Device ground Pin not connected internally LOGIC SYMBOL 17 Am29LV200 44 RESET A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 33 BYTE DQ15/A-1 30 ...

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... Valid Combinations Am29LV200T-90R, EC, EI, FC, FI, SC, SI Am29LV200B-90R Am29LV200T-100, Am29LV200B-100 EC, EI, EE, Am29LV200T-120, FC, FI, FE, Am29LV200B-120 SC, SI, SE Am29LV200T-150, Am29LV200B-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (–40°C to +85° Extended (– ...

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... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29LV200 Device Bus Operations Operation CE# OE# WE# RESET# Read ...

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... Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 13 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29LV200 in the DC Characteristics table represents for at least a period ±0.3 V, the device SS ) ...

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... Table 2. Am29LV200T Top Boot Block Sector Address Table Sector A16 A15 A14 SA0 SA1 SA2 SA3 SA4 SA5 SA6 Table 3. Am29LV200B Bottom Boot Block Sector Address Table Sector A16 A15 A14 SA0 SA1 ...

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... Table 4. Am29LV200 Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29LV200 Byte L (Top Boot Block) Device ID: Word L Am29LV200 (Bottom Boot Byte L Block) Sector Protection Verification Logic Low = Logic High = V IL Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector ...

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... Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to read- ing array data (also applies during Erase Suspend). Am29LV200 or WE initiate a write cycle, IH and OE ...

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... The system is not required to provide any con- trols or timings during these operations. Table 5 shows the address and data requirements for the chip erase command sequence. Am29LV200 START Write Program Command Sequence Data Poll ...

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... See “Write Operation Status” for information on these status bits. After an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 Am29LV200 ...

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... START Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Notes: 1. See Table 5 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29LV200 Embedded Erase algorithm in progress Yes 20513D-6 14 ...

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... Table 5. Am29LV200 Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector Protect Verify 4 (Note 9) Byte Word Program 4 Byte Word ...

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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29LV200 Yes Yes PASS 20513D-7 16 ...

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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. Am29LV200 ...

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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1” . See text. Figure 5. Toggle Bit Algorithm Am29LV200 (Note 1) No (Notes Program/Erase Operation Complete ...

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... DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details Table 6. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29LV200 DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...

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... Operating ranges define those limits between which the func- tionality of the device is guaranteed +0.8 V –0.5 V –2 Figure 6. Maximum Negative Overshoot +0 Figure 7. Maximum Positive Overshoot Am29LV200 20513D-9 Waveform 20513D-10 Waveform 20 ...

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... V 0 –0.5 0 3 4.0 mA min I = –2 min I = –100 µ min CC 2.3 . Typical Am29LV200 Typ Max Unit 1.0 µA 35 µA 1.0 µ 0.2 5 µA 0.2 5 µA 0.2 5 µA 0 0.3 V ...

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... Figure 8. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note 1500 2000 2500 Time Frequency in MHz Figure 9. Typical I vs. Frequency CC1 Am29LV200 3000 3500 4000 20513D- 20513D-12 22 ...

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... Input timing measurement reference levels Output timing measurement reference levels 20513D-13 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV200 -90R, -120, -100 -150 Unit 1 TTL gate L 30 100 0.0– ...

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... OE OE Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 12. Read Operations Timings Am29LV200 Speed Option -90R -100 -120 -150 Min 90 100 120 150 Max 90 100 120 150 Max 90 100 120 150 ...

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... Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 13. RESET# Timings Am29LV200 All Speed Options Max 20 Max 500 Min 500 Min 50 Min 20 Min 20513D-16 Unit µ ...

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... Address DQ15 Input Output t FHQV The falling edge of the last WE# signal t SET ( HOLD AH and t specifications Am29LV200 -100 -120 -150 Unit 100 120 150 ns Data Output (DQ0–DQ7) Address Input 20513D-17 20513D-18 26 ...

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... -90R Min 90 Min Min 50 Min 50 Min Min Min Min Min Min 50 Min 30 Byte Typ Word Typ Typ Min Min Min Am29LV200 -100 -120 -150 Unit 100 120 150 ...

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... Illustration shows device in word mode WPH A0h t BUSY is the true data at the program address. OUT Figure 16. Program Operation Timings Am29LV200 Read Status Data (last two cycles WHWH1 Status D OUT t RB 20513D-19 28 ...

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... SA = sector address (for Sector Erase Valid Address for reading status data (see “Write Operation Status”). 2. Illustration shows device in word mode. Figure 17. Chip/Sector Erase Operation Timings 555h for chip erase WPH t DH 30h 10 for Chip Erase t BUSY Am29LV200 Read Status Data WHWH2 In Complete Progress t RB 20513D-20 ...

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... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29LV200 VA True Valid Data Valid Data True 20513D- Valid Status Valid Data (stops toggling) 20513D-22 High Z High Z 30 ...

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... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 20. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29LV200 Erase Resume Erase Erase Complete Read 20513D-23 All Speed Options 500 VIDR ...

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... See the “Erase and Programming Performance” section for more information -90R Min 90 Min Min 50 Min 50 Min Min Min Min Min Min 50 Min 30 Byte Typ Word Typ Typ Am29LV200 -100 -120 -150 Unit 100 120 150 ...

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... PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29LV200 PA DQ7# D OUT = data written to the OUT 20513D-25 ...

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... V, 100,000 cycles. CC –100 mA = 3.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29LV200 Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max –1.0 V 12.5 V – ...

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... MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering 18.30 18.50 19.80 20.20 0˚ 5˚ 0.50 0. 18.30 18.50 19.80 20.20 0˚ 5˚ 0.50 0.70 Am29LV200 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 SEATING PLANE 16-038-TS48 TSR048 0.08 DT95 0.20 8-8-96 lv 0.10 0.21 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 SEATING PLANE 16-038-TS48 TSR048 0.08 DT95 ...

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... PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 13.50 16.30 22 2.80 MAX. SEATING PLANE 0.10 0.35 Am29LV200 0.10 0.21 0˚ 0.60 8˚ 1.00 END VIEW 16-038-SO44-2 SO 044 DF83 8-8- ...

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... REVISION SUMMARY FOR AM29LV200 Revision D Global Revised formatting to be consistent with other current 3.0 volt-only data sheets. Revision D+1 DC Characteristics Changed Note 1 to indicate that OE listed current. Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ...